High mobility low voltage operating C60 based n type organic field effect transistors
Yazarlar (10)
G. Schwabegger
Johannes Kepler University Linz, Avusturya
Johannes Kepler University Linz, Avusturya
Mujeeb Ullah
Johannes Kepler University Linz, Avusturya
Johannes Kepler University Linz, Avusturya
M. Irimia-Vladu
Johannes Kepler University Linz, Avusturya
Johannes Kepler University Linz, Avusturya
M. Baumgartner
Johannes Kepler University Linz, Avusturya
Johannes Kepler University Linz, Avusturya
Prof. Dr. Yasin KANBUR Middle East Technical University (Metu), Türkiye
R. Ahmed Johannes Kepler University Linz, Avusturya
P. Stadler
Johannes Kepler University Linz, Avusturya
Johannes Kepler University Linz, Avusturya
S. Bauer Johannes Kepler University Linz, Avusturya
N. S. Sariciftci
Johannes Kepler University Linz, Avusturya
Johannes Kepler University Linz, Avusturya
H. Sitter Johannes Kepler University Linz, Avusturya
| Makale Türü |
Özgün Makale
(SSCI, AHCI, SCI, SCI-Exp dergilerinde yayınlanan tam makale)
|
||
| Dergi Adı | Synthetic Metals (Q2) | ||
| Dergi ISSN | 0379-6779 Dergi Bilgileri (2011) | ||
| Dergi Tarandığı Indeksler | SCI-Expanded | ||
| Makale Dili | İngilizce | Basım Tarihi | 10-2011 |
| Cilt / Sayı / Sayfa | 161 / 19 / 2058–2062 | DOI | 10.1016/j.synthmet.2011.06.042 |
| Makale Linki | http://linkinghub.elsevier.com/retrieve/pii/S037967791100302X | ||
| UAK Araştırma Alanları |
Fiziksel Kimya
|
||
| Özet |
| We report on C60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene) (BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude). The assembly of metal-oxide and organic passivation layer combines the properties of the high dielectric constant of the metal oxide and the good organic–organic interface between semiconductor and insulator provided by a thin capping layer on top of the AlOx film. This results in OFETs that operate with voltages lower than 500mV, while exhibiting field effect mobilities exceeding 3cm2V−1s−1. |
| Anahtar Kelimeler |
| C60 | Dielectric | High mobility | Low voltage | OFET |
Science Direct
High mobility low voltage operating C60 based n type organic field effect transistors
BM Sürdürülebilir Kalkınma Amaçları
| Atıf Sayıları | |
| Web of Science | 44 |
| Scopus | 49 |
| Google Scholar | 64 |