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Functionalisation of hexagonal boron phosphide (h-BP) monolayer via atomic adsorption       
Yazarlar (4)
Nergül Cakmak
Türkiye
Yelda Kadıoğlu
Aydın Adnan Menderes Üniversitesi, Türkiye
Prof. Dr. Gökhan GÖKOĞLU Prof. Dr. Gökhan GÖKOĞLU
Karabük Üniversitesi, Türkiye
Olcay Üzengi Aktürk
Aydın Adnan Menderes Üniversitesi, Türkiye
Devamını Göster
Özet
In this study, we investigate the adsorption properties of Fe, Co, Ni, Cu, Zn, In, Tl, Ar atoms on hexagonal boron phosphide monolayer (h-BP) using density functional theory within both GGA and LDA functionals. Bare h-BP is a direct gap semiconductor with planar structure. The adsorption of the atoms on h-BP exhibits a large variety of electronic properties like semiconducting, metallic, and half-metallic states. Fe- and Ni-adsorbed h-BPs show semiconducting character with decreased band gaps. Ni atom is strongly adsorbed on the surface giving largest adsorption energy observed in this work. Fe-adsorbed system is a semiconducting ferromagnet with 1.95 µB magnetic moment. Co adsorption results in a half-metallic behaviour with 1.00 µB net magnetic moment and a perfect spin polarisation at Fermi level. Cu, In, and Tl adsorbed h-BP systems show metallic character. The results obtained show that h-BP surface can be functionalised via adsorption of related single atoms and can be suitable for various applications in optoelectronics and spintronics.
Anahtar Kelimeler
atomic adsorption | boron phosphide monolayer | density functional theory | electronic structure | Two dimensional materials
Makale Türü Özgün Makale
Makale Alt Türü SSCI, AHCI, SCI, SCI-Exp dergilerinde yayımlanan tam makale
Dergi Adı PHILOSOPHICAL MAGAZINE LETTERS
Dergi ISSN 0950-0839 Wos Dergi Scopus Dergi
Dergi Tarandığı Indeksler SCI-Expanded
Dergi Grubu Q4
Makale Dili İngilizce
Basım Tarihi 03-2020
Cilt No 100
Sayı 3
Sayfalar 116 / 127
Doi Numarası 10.1080/09500839.2020.1728587
Makale Linki https://www.tandfonline.com/doi/full/10.1080/09500839.2020.1728587